This IRF9540N MOSFET utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed provides the designer with an
extremely efficient and reliable device for use in a wide variety of
applications.
Specifications:
· Drain-to-Source Breakdown
Voltage: -100 V
· Gate-to-Source Breakdown
Voltage: +/- 20 V
· Continuous Drain Current:
-23 A
· Minimum Operating
Temperature: -55°C
·
Maximum
Operating Temperature: 175°C
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