IRF540
third generation power MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness. The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation levels to approximately
50 W.
Features
• Dynamic dV/dt rating
•
Repetitive avalanche rated
•
Fast switching
•
Ease of paralleling
•
Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications
|
Number of Channels |
1 Channel |
|
Transistor Polarity |
N-Channel |
|
Drain-Source Breakdown Voltage (Vds) |
100V |
|
Continuous Drain Current (Id) |
33A |
|
Drain-Source Resistance (Rds On) |
44mOhms |
|
Gate-Source Voltage (Vgs) |
20V |
|
Gate Charge (Qg) |
71 nC |
|
Operating Temperature Range |
-55 - 175°C |
|
Power Dissipation (Pd) |
130W |
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