These
N−channel enhancement mode field effect transistors are produced using onsemi’s
proprietary, high cell density, DMOS technology. These products have been
designed to minimize on−state resistance while providing rugged, reliable, and
fast switching performance. These products are particularly suited for low−voltage,
low−current applications, such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
Features
• High
Density Cell Design for Low RDS(on)
• Voltage
Controlled Small Signal Switch
• Rugged and
Reliable • High Saturation Current Capability
• ESD
Protection Level: HBM > 100 V, CDM > 2 kV
• This Device
is Pb−Free and Halogen Free
No review given yet!
Fast Delivery all across the country
Safe Payment
7 Days Return Policy
100% Authentic Products
You need to Sign in to view this feature
This address will be removed from this list
english
